? semiconductor components industries, llc, 2004 july, 2004 ? rev. 6 1 publication order number: d44h/d d44h series (npn), d45h series (pnp) preferred devices complementary silicon power transistors these series of plastic, silicon npn and pnp power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. features ? pb?free package is available ? low collector?emitter saturation voltage v ce(sat) = 1.0 v (max) @ 8.0 a ? fast switching speeds ? complementary pairs simplifies designs maximum ratings rating symbol value unit collector?emitter voltage d44h8, d45h8 d44h11, D45H11 v ceo 60 80 vdc emitter base voltage v eb 5.0 vdc collector current ? continuous ? peak (note 1) i c 10 20 adc total power dissipation @ t c = 25 c @ t a = 25 c p d 50 2.0 w operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit ??????????? ? ????????? ? ??????????? thermal resistance, junction?to?case ??? ? ? ? ??? r jc ????? ? ??? ? ????? 2.5 ??? ? ? ? ??? c/w ??????????? ? ????????? ? ??????????? thermal resistance, junction?to?ambient ??? ? ? ? ??? r ja ????? ? ??? ? ????? 62.5 ??? ? ? ? ??? c/w ??????????? ? ????????? ? ??????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ??? ? ? ? ??? t l ????? ? ??? ? ????? 275 ??? ? ? ? ??? c 1. pulse width 6.0 ms, duty cycle 50%. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping 2 d44h8 to?220 to?220ab case 221a style 1 50 units/rail 3 4 1 10 a complementary silicon power transistors 60, 80 v 2 marking diagram d4xhyy ayww http://onsemi.com preferred devices are recommended choices for future use and best overall value. d45h8g to?220 (pb?free) 50 units/rail ordering information d44h11 to?220 50 units/rail d45h8 to?220 50 units/rail D45H11 to?220 50 units/rail 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. x = 4 or 5 yy = 8 or 11 a = assembly location y = year ww = work week
d44h series (npn), d45h series (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ???? ???? symbol ???? ???? min ???? ???? max ??? ??? unit ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (v ce = 1.0 vdc, i c = 2.0 adc) d44h8, 11 d45h8, 11 (v ce = 1.0 vdc, i c = 4.0 adc) d44h8, 11 d45h8, 11 ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? h fe ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 20 40 20 40 ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? ? ? ? ? ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? ? ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ???? ???? symbol ??? ??? min ??? ??? typ ??? ??? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = rated v ceo , v be = 0) ???? ? ?? ? ???? i ces ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? 10 ??? ? ? ? ??? a ?????????????????????? ?????????????????????? emitter cutoff current (v eb = 5.0 vdc) ???? ???? i ebo ??? ??? - ??? ??? - ??? ??? 100 ??? ??? a ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter saturation voltage (i c = 8.0 adc, i b = 0.4 adc) d44h/d45h8, 11 (i c = 8.0 adc, i b = 0.8 adc) d44h ???? ? ?? ? ???? v ce(sat) ??? ? ? ? ??? ? ? ??? ? ? ? ??? ? ? ??? ? ? ? ??? 1.0 1.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? base?emitter saturation voltage (i c = 8.0 adc, i b = 0.8 adc) ???? ? ?? ? ???? v be(sat) ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? 1.5 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector capacitance (v cb = 10 vdc, f test = 1.0 mhz) d44h series d45h series ???? ? ?? ? ? ?? ? ???? c cb ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? 130 230 ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? pf ?????????????????????? ? ???????????????????? ? ?????????????????????? gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) d44h series d45h series ???? ? ?? ? ???? f t ??? ? ? ? ??? ? ? ??? ? ? ? ??? 50 40 ??? ? ? ? ??? ? ? ??? ? ? ? ??? mhz ????????????????????????????????? ????????????????????????????????? switching times ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? delay and rise times (i c = 5.0 adc, i b1 = 0.5 adc) d44h series d45h series ???? ? ?? ? ? ?? ? ???? t d + t r ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? 300 135 ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? ns ?????????????????????? ? ???????????????????? ? ?????????????????????? storage time (i c = 5.0 adc, i b1 = i b2 = 0.5 adc) d44h series d45h series ???? ? ?? ? ???? t s ??? ? ? ? ??? ? ? ??? ? ? ? ??? 500 500 ??? ? ? ? ??? ? ? ??? ? ? ? ??? ns ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? fall time (i c = 5.0 adc, i b1 = 102 = 0.5 adc) d44h series d45h series ???? ? ?? ? ? ?? ? ???? t f ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? 140 100 ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? ns
d44h series (npn), d45h series (pnp) http://onsemi.com 3 figure 1. d44h11 dc current gain figure 2. D45H11 dc current gain i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0.01 10 100 1000 10 1 0.1 0.01 10 100 1000 h fe , dc current gain v ce = 1 v 125 c h fe , dc current gain figure 3. d44h11 dc current gain figure 4. D45H11 dc current gain i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0.01 10 100 1000 10 1 0.1 0.01 10 100 1000 h fe , dc current gain v ce = 5 v h fe , dc current gain figure 5. d44h11 on?voltage figure 6. D45H11 on?voltage i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0 0.05 0.40 10 1 0.1 0 0.1 0.3 0.6 saturation voltage (volts) v ce(sat) @ i c /i b = 10 saturation voltage (volts) ?40 c 25 c v ce = 1 v 125 c ?40 c 25 c 125 c ?40 c 25 c v ce = 5 v 125 c ?40 c 25 c 125 c ?40 c 25 c 0.10 0.15 0.20 0.25 0.30 0.35 0.2 0.5 0.4 v ce(sat) @ i c /i b = 10 125 c ?40 c 25 c
d44h series (npn), d45h series (pnp) http://onsemi.com 4 figure 7. d44h11 on?voltage figure 8. D45H11 on?voltage i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0 0.2 1.2 10 1 0.1 0 0.2 0.6 1.4 saturation voltage (volts) v be(sat) @ i c /i b = 10 saturation voltage (volts) 125 c ?40 c 25 c 0.4 0.6 0.8 1.0 0.4 1.0 0.8 v be(sat) @ i c /i b = 10 125 c ?40 c 25 c 1.2 100 1.0 v ce , collector?emitter voltage (volts) 5.0 10 t c 70 c duty cycle 50% 2.0 3.0 20 30 50 100 1.0 7.0 d44h/45h8 d44h/45h10,11 figure 9. maximum rated forward bias safe operating area 70 1.0 s dc 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 10 s 100 s 1.0 ms i c , collector current (amps) 0 figure 10. power derating t, temperature ( c) 0 40 60 100 120 160 40 t c 20 60 0 2.0 t a 1.0 3.0 80 140 t c t a 20 p d , power dissipation (watts) t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z jc(t) = r(t) r jc r jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) figure 11. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01
d44h series (npn), d45h series (pnp) http://onsemi.com 5 package dimensions to?220 plastic case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
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